Shutter disc for a semiconductor processing tool

ABSTRACT

Some implementations described herein provide a shutter disc for use during a conditioning process within a processing chamber of a deposition tool. The shutter disc described herein includes a material having a wave-shaped section to reduce heat transfer to the shutter disc and to provide relief from thermal stresses. Furthermore, the shutter disc includes a deposition of a thin-film material on a backside of the shutter disc, where a diameter of the shutter disc causes a spacing between an inner edge of the thin-film material and an outer edge of a substrate support component. The spacing prevents an accumulation of material between the thin film material and the substrate support component, reduces tilting of the shutter disc due to a placement error, and reduces heat transfer to the shutter disc.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.17/662,107, filed May 5, 2022, which claims priority to U.S. ProvisionalApplication No. 63/224,707, filed on Jul. 22, 2021, and entitled“SHUTTER DISC FOR A SEMICONDUCTOR PROCESSING TOOL,” the contents ofwhich are incorporated herein by reference in their entireties.

BACKGROUND

A physical vapor deposition (PVD) tool, such as a sputtering tool (orsputter deposition tool) includes a semiconductor processing tool thatperforms a PVD operation within a processing chamber to deposit materialonto a semiconductor substrate such as a wafer. The material may includea metal, a dielectric, or another type of material. A PVD operation(such as a sputtering operation) may include placing the semiconductorsubstrate on an anode in a processing chamber, in which a gas (e.g.,argon or another chemically inert gas) is supplied and ignited to form aplasma of ions of the gas. The ions in the plasma are accelerated towarda cathode formed of the material to be deposited, which causes the ionsto bombard the cathode and release particles of the material. The anodeattracts the particles, which causes the particles to travel toward anddeposit onto the semiconductor substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a diagram of an example semiconductor processing systemdescribed herein.

FIG. 2 is a diagram of an example deposition tool described herein foruse in the semiconductor processing tool of FIG. 1 .

FIG. 3 is a diagram of an exploded view of an example processing chamberdescribed herein.

FIG. 4 is a diagram of an example implementation of the shutter disc inan example deposition tool described herein.

FIGS. 5A and 5B are diagrams of an example implementation of the shutterdisc for the deposition tool of FIG. 2 described herein.

FIG. 6 is a diagram of an example implementation of a portion of theshutter disc for the deposition tool of FIG. 2 described herein.

FIG. 7 is a diagram of example components of one or more devices ofFIGS. 1 and 2 described herein.

FIG. 8 is a flowchart of an example process associated with performing aconditioning operation in a processing chamber using a shutter discdescribed herein.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

A physical vapor deposition (PVD) process may be performed in aprocessing chamber of a PVD tool. The PVD tool may be a standalone toolor may be included in a cluster tool or another type of semiconductorprocessing system that includes a plurality of processing chambers.

The processing chamber of the PVD tool may include a target and asubstrate support component (e.g., a hot-plate or an electrostaticchuck, among other examples) on which a semiconductor substrate ispositioned below the target. During the PVD process, material sourcedfrom the target is deposited onto the semiconductor substrate using aplasma formed from a gas (e.g., argon or another chemically inert gas,among other examples) supplied between the target and the semiconductorsubstrate.

A conditioning process may be performed as a part of a maintenanceprocess that conditions and/or cleans the target and/or surfaces of theprocessing chamber. The conditioning process may be performed tomaintain a degree of cleanliness within the processing chamber and tomaintain the performance of the PVD tool. For example, a burn-inconditioning process may be performed in which a plasma is generatedwithin the processing chamber and is used to remove particulates (e.g.,oxides or other contaminants) that have formed on the target (e.g.,during downtime or idle time of the PVD tool). As another example, apasting conditioning process may be performed to coat surfaces withinthe processing chamber with a thin layer of a material such as titaniumto prevent flaking of underlying particulates (e.g., titanium nitridecontaminants) from the surfaces.

During the conditioning process, the particulates may be deposited ortransferred onto one or more exposed surfaces of the substrate supportcomponent. The particulates may subsequently cause chucking errors(e.g., errors positioning and/or securing the semiconductor substrate onthe substrate support component) in a PVD operation performed by the PVDtool. Furthermore, the particulates may transfer onto a backside of thesemiconductor substrate, reducing a yield of integrated circuit devicesfabricated from the semiconductor substrate.

To prevent the particulates from being deposited or transferred onto theone or more surfaces of the substrate support component, the PVD toolmay include a shutter disc. In operation, the shutter disc may bepositioned, via a transfer robot, atop the substrate support componentto prevent the particulates from being deposited or transferred onto theone or more surfaces of the substrate support component during theconditioning process.

Heat associated with the conditioning process and/or heat from a heatsource that is part of the substrate support component may introduce oneor more thermal stresses to the shutter disc. Such thermal stresses maycause cracking to the shutter disc, which results in the shutter discneeding to be replaced. The process to replace the shutter disc mayincrease a downtime of the PVD tool during maintenance (and reducethroughput of product from the PVD tool) and/or increase maintenanceexpenses.

Furthermore, a diameter of the shutter disc may cause a spacing betweenthe substrate support component and a portion of a thin-film material ona backside of the shutter disc. The spacing, in turn, may reduce aneffectiveness of the conditioning process and/or cause thermal stress tothe shutter disc. As an example, the spacing may increase the likelihoodof the thin-film material and/or particulates from the conditioningprocess contaminating the substrate support component. As anotherexample, the portion of the thin-film material on the backside of theshutter disc may interfere with the substrate support component duringplacement of the shutter disc by a transfer robot. This may result in atilt of the shutter disc, which enables the particulates to migrateunder the shutter disc and be deposited or transferred onto thesubstrate support component. As another example, the portion of thethin-film material on the backside of the shutter disc may come intothermal contact with the substrate support component. In the event thethin-film material includes a material having a relatively high thermalconductivity (e.g., aluminum or another material), the thin-filmmaterial may transfer heat from the substrate support component to theshutter disc, which may cause thermal stresses and/or cracking of theshutter disc.

Some implementations described herein provide a shutter disc for use ona substrate support component in a deposition tool (e.g., a PVD tool oranother type of deposition tool) during a conditioning process for thedeposition tool. The shutter disc described herein includes across-sectional wave shape to reduce heat transfer to the shutter discand to provide relief from thermal stresses on the shutter disc duringthe conditioning process. Furthermore, a width or a diameter of theshutter disc is configured to reduce, minimize, and/or prevent alikelihood of contamination of the substrate support component thatmight otherwise result from a thin-film material on a backside of theshutter disc and/or particulates from the conditioning process. Inparticular, the width or the diameter of the shutter disc may beconfigured to reduce, minimize, and/or prevent a likelihood of thethin-film material contacting the substrate support component, tiltingof the shutter disc due to a placement error, and/or heat transfer fromthe substrate support component to the shutter disc, among otherexamples.

The wave shape of the shutter disc in combination with the width or thediameter of the shutter disc may increase an effectiveness of theshutter disc to prevent contamination of the substrate supportcomponent, and may reduce a likelihood of cracking and/or another typeof physical damage to the shutter disc. In this way, effectiveness ofthe conditioning process is increased. This may reduce chucking errorsexperienced by the PVD tool, may increase a time duration betweenmaintenance operations for the PVD tool, and/or may increase operatingefficiency and throughput of the PVD tool. Furthermore, and in additionto realizing a savings in maintenance costs due to a decreased rate ofshutter disc replacement, a yield of integrated circuit devicesfabricated using the PVD tool may be increased due to decreased downtimeand increased throughput of the PVD tool.

FIG. 1 is a diagram of an example semiconductor processing system 100described herein. The semiconductor processing system 100 may perform asemiconductor manufacturing process, such as a PVD process (orsputtering process), a chemical vapor deposition (CVD) process, and/oranother type of deposition process. The semiconductor processing system100 may also perform a conditioning process for cleaning and/ormaintenance purposes, such as a burn-in conditioning process or apasting conditioning process, among other examples.

In some implementations, and as shown in FIG. 1 , the semiconductorprocessing system 100 includes one or more main frames 102, 104 having aplurality of sidewalls 106. The main frames 102, 104 and the pluralityof sidewalls 106 may provide structural support to the semiconductorprocessing system 100.

A plurality of vacuum load lock chambers 108 is located in the center ofmain frames 102, 104. In some implementations, one or more of the vacuumload lock chambers 108 is maintained in a vacuum state to stagesemiconductor substrates for processing within the semiconductorprocessing system 100 to receive the semiconductor substrates afterprocessing within the semiconductor processing system 100. Each of theplurality of vacuum load lock chambers 108 spatially separates thesemiconductor substrates from processing chambers of the semiconductorprocessing system 100.

The semiconductor processing system 100 includes a plurality ofprocessing chambers 110-122. Each processing chamber may include one ormore components to deposit material onto a semiconductor substratereceived from one of the plurality of vacuum load lock chambers 108.

An external semiconductor substrate elevator 124 is located adjacent tothe semiconductor processing system 100. In some implementations, theexternal semiconductor substrate elevator 124 is a part of thesemiconductor processing system 100. In some implementations, theexternal semiconductor substrate elevator 124 is a component that isseparate from the semiconductor processing system 100. The externalsemiconductor substrate elevator 124 is configured to hold a cassettecontaining a plurality of semiconductor substrates (e.g., wafers). Theexternal semiconductor substrate elevator 124 also includes an automaticdistributor for selecting a semiconductor substrate from the pluralityof semiconductor substrates and timely supplying the selectedsemiconductor substrate to one of the plurality of vacuum load lockchambers 108 to stage for processing by one of the processing chambers110-122.

The semiconductor processing system 100 may further include, within oneor more of the plurality of vacuum load lock chambers 108, asemiconductor substrate transfer system 126 including a plurality ofrobotic arms 128. The semiconductor substrate transfer system 126,including the plurality of robotic arms 128, may operate in conjunctionwith the external semiconductor substrate elevator 124 to transportsemiconductor substrates amongst a cassette on the externalsemiconductor substrate elevator 124, and to and/or from one or more ofthe processing chambers 110-122.

One or more of the processing chambers 110-122 may be subjected to aconditioning process to clean the one or more of the processing chamber110-122 and to maintain a degree of cleanliness in the one or more ofthe processing chamber 110-122. Examples of such a conditioning processinclude a burn-in conditioning process that forms a plasma to removeparticulates from a target material within the one or more of theprocessing chambers 110-122, a pasting conditioning process that coatsan interior surface within the one or more of the processing chambers110-122 to prevent flaking of particulates from the interior surface,and/or another conditioning process.

As indicated above, FIG. 1 is provided as an example. Other examples maydiffer from what is described with regard to FIG. 1 . For example,another example may include additional components, fewer components,different components, or differently arranged components than thoseshown in FIG. 1 . Additionally, or alternatively, a set of components(e.g., one or more components) of FIGS. 1 may perform one or morefunctions described herein as being performed by another set ofcomponents.

FIG. 2 is a diagram of an example deposition tool 200 described hereinfor use in the semiconductor processing tool of FIG. 1 . The depositiontool 200 may correspond to a PVD tool, a CVD tool, a sputtering tool, oranother type of deposition tool. Furthermore, the deposition tool 200may perform a semiconductor manufacturing process (e.g., a depositionprocess) when manufacturing semiconductor product. Furthermore, thedeposition tool 200 may perform a conditioning process to maintain adegree of cleanliness of the deposition tool 200.

The deposition tool 200 includes a processing chamber 202 which maycorrespond to one of the processing chambers 110-122 as described inconnection with FIG. 1 . The deposition tool 200 further includes asubstrate support component 204 (e.g., an electrostatic chuck (ESC) oranother type of substrate support component) upon which a semiconductorsubstrate 206 (e.g., a semiconductor wafer) is positioned and secured.In some implementations, the substrate support component 204 includes aheating component (e.g., a hot plate, among other examples) to provideheat to the semiconductor substrate 206 during the deposition processand/or the conditioning process. The substrate support component 204 maybe, for example, fabricated from aluminum, stainless steel, ceramic, orcombinations thereof.

The deposition tool 200 further includes a shutter disc 208. The shutterdisc 208 is an approximately round or an approximately disc-shapedcomponent that is used in a conditioning process in the processingchamber 202. The composition and dimensions of the shutter disc 208 arefurther described herein in connection with FIGS. 4, 5A, 5B, and 6 .During the conditioning process, a rotating arm or other component(e.g., the robotic arm 128) may position the shutter disc 208 onto orover surfaces of the substrate support component 204 in place of thesemiconductor substrate 206. During the conditioning process, theshutter disc 208 protects the substrate support component 204 and one ormore other components adjacent to and/or around the substrate supportcomponent 204 from particulates or contaminants that may be generated inthe conditioning process.

In some implementations, the deposition tool 200 includes a target 210.The target 210 may include a material in solid form that is to bedeposited on the semiconductor substrate 206. A plasma 212 may be formedfrom a gas (e.g., argon (Ar) or another chemically inert gas, amongother examples) and supplied between the target 210 and thesemiconductor substrate 206. One or more electrical biases may beapplied to the target 210 and/or the semiconductor substrate 206. Anelectrical bias may be applied to the target 210 to cause ions in theplasma 212 to accelerate towards the target 210 to sputter etch thetarget 210. This causes material of the target 210 to be dislodged andmobilized. An electrical bias may be applied to the substrate supportcomponent 204 to generate an electrical potential or electric fieldbetween the target 210 and the semiconductor substrate 206. Thispromotes or facilitates a flow of the material that was dislodged fromthe target 210 toward the semiconductor substrate 206.

An example of a biasing power source that may be included in thedeposition tool 200 includes a radio frequency (RF) power circuit 214.The RF power circuit 214 generates an RF bias voltage within theprocessing chamber 202. In some implementations, the RF power circuit214 is connected to the substrate support component 204 to provide theRF bias voltage. The RF bias voltage may promote or facilitate a flow ofthe material that was dislodged from the target 210 toward thesemiconductor substrate 206. Another RF bias voltage may be used togenerate the plasma 212 and/or accelerate ions in the plasma 212 towardthe target 210.

Another example of a biasing power source that may be included in thedeposition tool 200 includes a direct current (DC) power circuit 216.The DC power circuit 216 generates DC power in the form of a DC biasvoltage within the processing chamber 202. In some implementations, theDC power circuit 216 is connected to the target 210 using an electrode218 and provides the target 210 with the DC bias voltage.

In some implementations, the deposition tool 200 includes a gas supply220 that supplies one or more gases used to form plasmas (e.g., theplasma 212 used for the deposition process or another plasma used forthe conditioning process, among other examples). The gas supply 220 maycontrol a rate of flow of the gas, which controls one or more parametersof the plasma 212 including the ionization rate in the plasma 212, theion passivation rate on the semiconductor substrate 206, and/or anotherparameter.

The deposition tool 200 further includes a vacuum pump 222. The vacuumpump 222 is connected to the deposition tool 200. The vacuum pump 222 isconfigured to create a vacuum state in the processing chamber 202 duringthe deposition process and/or the conditioning process.

The deposition tool 200 further includes a lower shield 224 and a platenring 226. The lower shield 224 may shield the semiconductor substrate206 during the deposition process and shield the shutter disc 208 duringthe conditioning process. The platen ring 226 may assist maintaining aposition of the semiconductor substrate 206 during the depositionprocess and assist maintaining a position of the shutter disc 208 duringthe conditioning process. The platen ring 226 may be fabricated from amaterial that can resist erosion by the generated plasma 212, forexample, a metallic material such as stainless steel, titanium, oraluminum, or a ceramic material such as aluminum oxide. However, anothersuitable material may be used such as a synthetic rubber, a thermoset, aplastic, a thermoplastic, or any other material that meets a chemicalcompatibility, durability, sealing, and/or temperature requirement ofthe deposition process and/or the conditioning process.

The deposition tool 200 further includes a magnet 228. In someimplementations, the magnet 228 enhances uniform consumption of thetarget material during the deposition process. The magnet 228 may alsopromote uniform cleaning of the target 210 during the conditioningprocess.

In some implementations, the deposition tool 200 includes an uppershield 230. The upper shield 230 is positioned adjacent to the lowershield 224. The upper shield 230 may be supported by the lower shield224. The lower shield 224 and the upper shield 230 cooperate to reduceor eliminate materials from the target 210 from coming in contact withcomponents (e.g., the substrate support component 204) of the depositiontool 200. The lower shield 224 and the upper shield 230 may befabricated from a material that can resist erosion by the generatedplasma 212, such as a stainless-steel material, a titanium material, analuminum material, or a ceramic material, among other examples.

As indicated above, FIG. 2 is provided as an example. Other examples maydiffer from what is described with regard to FIG. 2 . For example,another example may include additional components, fewer components,different components, or differently arranged components than thoseshown in FIG. 2 . Additionally, or alternatively, a set of components(e.g., one or more components) of FIGS. 2 may perform one or morefunctions described herein as being performed by another set ofcomponents.

FIG. 3 is diagram of an exploded view of an example implementation 300of the processing chamber 202 described herein (e.g., the processingchambers 110-122). The processing chamber 202 includes a lid 302attached to the processing chamber 202. The lid 302 seals the processingchamber 202 to allow an environment in the processing chamber 202 to becontrolled (e.g., control the vacuum state within the processing chamber202, among other examples).

The processing chamber 202 further includes a combination of shields andrings. The shields and rings may shield or position the semiconductorsubstrate 206 during the deposition process. The same shields and ringsmay also shield or position the shutter disc 208 during the conditioningprocess.

In some implementations, the processing chamber 202 includes the platenring 226. The platen ring 226 may be fabricated from a material that canresist erosion by the generated plasma 212, for example, a metallicmaterial such as stainless steel, titanium, or aluminum, or a ceramicmaterial such as aluminum oxide. However, another suitable material maybe used such as a synthetic rubber, a thermoset, a plastic, athermoplastic, or any other material that meets a chemicalcompatibility, durability, sealing, and/or temperature requirement ofthe deposition process and/or the conditioning process. The platen ring226 may assist retaining the semiconductor substrate 206 during thedeposition process. The platen ring 226 may also assist retaining theshutter disc 208 during the conditioning process.

In some implementations, the processing chamber 202 includes the lowershield 224 and the upper shield 230. The lower shield 224 and the uppershield 230 may be fabricated from a material that can resist erosion bythe generated plasma 212, such as a stainless-steel material, a titaniummaterial, an aluminum material, or a ceramic material, among otherexamples.

In some implementations, the processing chamber 202 includes a cathodeseat flange 304 and an earth shield 306. The cathode seat flange 304 maybe electrically isolated from other parts of the processing chamber 202to provide an electrical terminal (e.g., the electrode 218) to providean electrical field in the processing chamber 202. The earth shield 306may provide electrical shielding for the electrical field generated bythe cathode seat flange 304.

As indicated above, FIG. 3 is provided as an example. Other examples maydiffer from what is described with regard to FIG. 3 . For example, insome implementations, a different stacking or ordering of the variousshields and rings is contemplated beyond the stacking and ordering ofthose illustrated with respect to FIG. 3 .

FIG. 4 is a diagram of an example implementation 400 of the shutter disc208 described herein. As shown in FIG. 4 , the shutter disc 208 may bepositioned on the substrate support component 204, which may be includedin the processing chamber 202 of the deposition tool 200. The shutterdisc 208 is configured to prevent the particulates generated by theconditioning process from accumulating on (or being deposited onto)surfaces of the substrate support component 204.

The shutter disc 208 includes a body 402. The body 402 may include amaterial that has a relatively low thermal conductivity to reduce and/orminimize thermal stress of the shutter disc 208 and to reduce and/orminimize cracking and other physical damage to the shutter disc 208.Moreover, the material may include a high strength and/or a low densityto further resist thermal stress and cracking of the shutter disc 208.Examples of such a material include a titanium (Ti) material having athermal conductivity in a range of approximately 16 watts permeter-Kelvin (w/mK) to approximately 17 w/mK, a titanium alloy such asTi-6Al-4V having a thermal conductivity in a range of approximately 6w/mK to approximately 7 w/mK, a ceramic/steel material, and/or aceramic/steel alloy material, among other examples. The material mayfurther include one or more of a high temperature resistance, a lowtemperature resistance, a strong acid resistance or a strong alkaliresistance, a high strength, and/or a low density. In someimplementations, the body 402 is formed from a single piece of amaterial or a combination of materials.

The body 402 of the shutter disc 208 may be an approximate circularshape (or an approximate disc shape), and may include a diameter 404.The diameter 404 may be included in a range of greater thanapproximately 305 millimeters (mm) to approximately 310 mm. By selectingthe diameter 404 within this range, the shutter disc 208 may preventparticulates associated with the conditioning process from accumulatingon surfaces of the substrate support component 204 (e.g., anelectrostatic chuck or a hot plate of the substrate support component204, among other examples) while not disrupting the plasma used as partof the conditioning process. However, other values for the diameter 404of the shutter disc 208 are within the scope of the present disclosure.

The body 402 further includes a backside (or bottom) surface 406 and atop surface 408. While the body 402, the backside surface 406, and thetop surface 408 are illustrated in FIG. 4 as having an approximatelyflat and planar shape, the body 402 (or a potion thereof), the backsidesurface 406 (or a potion thereof), and/or the top surface 408 (or apotion thereof) of the shutter disc 208 may be wave-shaped along a crosssection of the shutter disc 208 (e.g., in a cross section along thediameter 404), as described in greater detail herein.

The shutter disc 208 further includes a thin-film material 410 on one ormore portions of the shutter disc 208. As an example, the thin-filmmaterial 410 (e.g., an aluminum (Al) material) may be included on thetop surface 408 (or a portion thereof) of the shutter disc 208. Asanother example, the thin-film material 410 may be included on thebackside surface 406 (or a portion thereof) of the shutter disc 208. Asanother example, the thin-film material 410 wraps around edges of thebody 402 and onto the backside surface 406 of the shutter disc 208. Thethin-film material 410 may include a metallic material, such as analuminum material or an aluminum alloy material. In someimplementations, a thickness of the thin-film material 410 is in a rangeof 240 microns to approximately 260 microns. However, other values forthe range are within the scope of the present disclosure.

As shown in FIG. 4 , a configuration of the thin-film material 410includes a portion 410 a on an outer region of the backside surface 406.The portion 410 a includes an approximately annular shape or ring shapethat conforms to the shape of a perimeter or outer edge of the backsidesurface 406. The portion 410 a of the thin-film material 410 on theouter region of the backside surface 406 includes an inner edge 412closet to the substrate support component 204. Also as shown in FIG. 4 ,the shutter disc 208 includes an untreated interior region of thebackside surface 406 (e.g., a region of the backside surface 406 that isnot coated with the thin-film material 410). The untreated interiorregion may extend from a center of the shutter disc 208 on the backsidesurface 406 to the inner edge 412 of the portion 410 a of the thin-filmmaterial 410 on the backside surface 406 such that a space or a gap isprovided between the substrate support component 204 and the inner edge412 of the portion 410 a of the thin-film material 410.

The portion 410 a of the thin-film material 410 on the outer region ofthe backside surface may have a width 414. The width 414 may bedependent on the diameter 404. As an example, if the diameter 404 isapproximately 305 mm, the width 414 may be in a range from approximately1.0 mm to approximately 2.5 mm.

Also as shown in FIG. 4 , the substrate support component 204 (e.g., theelectrostatic chuck or hot plate of the substrate support component 204)has a diameter 416. In some implementations, the diameter 416 isincluded in a range of approximately 285 mm to approximately 295 mm. Byselecting the diameter 416 within this range, the substrate supportcomponent 204 may adequately support a semiconductor substrate (e.g.,the semiconductor substrate 206) that is approximately 300 mm in widthduring a deposition process without disrupting a plasma used during thedeposition process (e.g., the plasma 212). However, other values for thediameter 416 of the substrate support component 204 are within the scopeof the present disclosure.

The substrate support component 204 has an outer edge 418. When theshutter disc 208 is positioned on the substrate support component 204, aspacing 420 (e.g., a gap) is provided between the inner edge 412 and theouter edge 418. The spacing 420 has a width 422. In someimplementations, the diameter 404 of the shutter disc 208 is configuredsuch that the width 414 of the portion 410 a of the thin-film material410 on the outer region of the backside surface 406 of the shutter disc208 is less than the width 422 of the spacing 420 between the inner edge412 of the thin-film material 410 and the outer edge 418 of thesubstrate support component 204. Moreover, the diameter 404 of theshutter disc 208 may be configured such that the width 422 of thespacing 420 is in a range of approximately 3.0 mm to approximately 5.0mm. Selecting the width 422 within this range may prevent fusing of amaterial (e.g., the particulates or another material) between the inneredge 412 and the outer edge 418 during the conditioning process. Asanother example, selecting the width 422 within this range may preventmechanical interferences between the inner edge 412 and the substratesupport component 204 during placement of the shutter disc 208 on thesubstrate support component 204, thereby preventing a tilting of theshutter disc 208 that allows the particulates of the conditioningprocess to migrate under the shutter disc 208 and onto surfaces of thesubstrate support component 204. As another example, selecting the width422 within this range may prevent thermal contact between the thin-filmmaterial 410 and the substrate support component 204, thereby reducingheat transfer from the substrate support component 204 to the thin-filmmaterial 410 during the conditioning process that may cause cracking(e.g., thermal damage) to the shutter disc 208. As another example,selecting the width 422 within this range may prevent a reflow of thethin-film material 410 (e.g., an aluminum material) onto the substratesupport component 204 in the event the substrate support component 204includes a hot plate. However, other values for the width 422 of thespacing 420 are within the scope of the present disclosure. In someimplementations, the width 422 is greater than approximately 5.0 mm.

In some implementations, the diameter 404 of the shutter disc 208 isincluded in a range of greater than 10 mm greater than the diameter 416of the substrate support component 204 to approximately 20 mm greaterthan the diameter 416 of the substrate support component 204. Byselecting the diameter 404 of the shutter disc 208 within this rangeallows the width 422 of the spacing 420 to be increased to reduce alikelihood of reflow of the thin-film material 410 onto the substratesupport component 204 (e.g., a hot plate). However, other values for thediameter 404 of the shutter disc 208 are within the scope of the presentdisclosure.

As indicated above, FIG. 4 is provided as an example. Other examples maydiffer from what is described with regard to FIG. 4 .

FIGS. 5A and 5B are diagrams of an example implementation 500 of theshutter disc 208 for the deposition tool 200 of FIG. 2 described herein.

FIG. 5A shows an isometric view of shutter disc 208. As shown in FIG.5A, the shutter disc 208 disc includes a center 502 and an outer edge504. A plurality of concentric crest portions 506 a-506 e of wave shapesextend between the center 502 and the outer edge 504. Furthermore, aplurality of concentric trough portions 508 a-508 e of wave shapesextend between the center 502 and the outer edge 504. The plurality ofconcentric crest portions 506 a-506 e and the plurality of concentrictrough portions 508 a-508 e combine to form a plurality of concentricwave shapes that extend between the center 502 and the outer edge 504.

A thermal contact area between the shutter disc 208 and the substratesupport component 204 may be formed when the shutter disc 208 ispositioned on the substrate support component 204. The substrate supportcomponent 204 may be heated in a conditioning process to a temperaturethat is in a range of approximately 295 degrees Celsius to approximately305 degrees Celsius (however, other temperatures are within the scope ofthe present disclosure). The amount of heat that is transferred from thesubstrate support component 204 to the shutter disc 208 in aconditioning process is dependent upon a size of the thermal contactarea between the shutter disc 208 and the substrate support component204. In comparison to a shutter disc that has a flat or linear surface,the plurality of concentric wave shapes reduce the thermal contact areabetween the shutter disc 208 and the substrate support component 204.The reduced thermal contact area reduces the amount of heat that istransferred to the shutter disc 208 from the substrate support component204 during the conditioning process.

In this way, the plurality of concentric wave shapes may provide stressrelief for the shutter disc 208 by reducing the amount of thermal stresson the shutter disc 208 as a result of repeated thermal cycling (e.g.,heating and cooling) of the shutter disc 208 in a plurality ofconditioning processes. In particular, the plurality of concentric waveshapes reduce thermal stress by reducing thermal expansion andcontraction of the shutter disc 208. Moreover, the plurality ofconcentric wave shapes provide increased structural rigidity for thebody 402 of the shutter disc 208, which reduces bending of the shutterdisc 208. As an example, a target allowable bending threshold may beless than approximately 0.5 millimeters.

The plurality of concentric wave shapes may reduce a likelihood ofcracking and other physical damage of the shutter disc 208, whichincreases the reliability and the operational life of the shutter disc208. As an example, the plurality of concentric wave shapes may increasethe operational life of the shutter disc 208 from approximately 1000kilowatt hours to approximately 1500 kilowatt hours or greater.

FIG. 5B shows a cross-section view of the example implementation 500.FIG. 5B shows the diameter 404 of the shutter disc 208. FIG. 5B furthershows the cross-sectional wave shape of the body 402 of the shutter disc208. The cross-sectional wave shape results from the plurality ofconcentric wave shapes (e.g., the combination of the pluralityconcentric crest portions 506 a-506 e and plurality of concentric troughportions 508 a-508 e). The cross-sectional wave shape (e.g., theplurality of concentric wave shapes) extends between the center 502 ofthe shutter disc 208 and the outer edge 504 of the shutter disc 208.

The outer edge 504 may be planar (e.g., include a planar region).Moreover, the cross-sectional wave shape may extend along a portion ofthe diameter 404 of the shutter disc 208 between opposing ends of theouter edge 504. As further shown in FIG. 5B, the plurality of concentricwave shapes may be included in the top surface 408 and the backsidesurface 406 of the body 402. Accordingly, the top surface 408 includes aplurality of concentric wave shapes and the backside surface 406includes another plurality of concentric wave shapes.

Dimensions of each of the concentric crest portions 506 a-506 e may beapproximately the same. Furthermore, dimensions of each of theconcentric trough portions 508 a-508 e may be the same. Such dimensions(e.g., dimensions that are approximately the same) may create one ormore subsets of wave shapes having same heights, same depths, samethicknesses, and same peak-to-peak widths.

Dimensions of each of the concentric crest portions 506 a-506 e mayvary. Furthermore, dimensions of each of the concentric trough portions508 a-508 e may vary. Such variations may create one or more subsets ofwave shapes having different heights, different depths, differentthicknesses, or different peak-to-peak widths.

In some implementations, and as shown in FIG. 5B, the shutter disc 208is configured with an interior recess having a diameter 512. As anexample, diameter 512 may range from approximately 270 mm toapproximately 280 mm. Selecting the diameter 512 in this range, whichmay be based on other dimensions or parameters of the substrate supportcomponent 204 (e.g., the diameter 416 of the substrate support component204), may allow the shutter disc 208 to “overlap” the substrate supportcomponent 204. Selecting the diameter 512 in this range may alsoaccommodate a spacing (e.g., the spacing 420) that increases theperformance and a reliability of the shutter disc 208. However, othervalues for the diameter 512 are within the scope of the presentdisclosure.

As indicated above, FIGS. 5A and 5B are provided as examples. Otherexamples may differ from what is described with regard to FIGS. 5A and5B. For example, while a quantity of five concentric wave shapes areillustrated with respect to FIGS. 5A and 5B, a greater or lesserquantity is possible. As another example, a spiral wave shape, apatterned wave shape (e.g., a “waffle”), a plurality of square waveshapes, or plurality of dimple shapes, among other examples, may besubstituted for the plurality of concentric wave shapes.

FIG. 6 is a diagram of an example implementation 600 of a portion of theshutter disc 208 for the deposition tool 200 of FIG. 2 described herein.The example implementation 600 illustrates various dimensions of theshutter disc 208.

As shown in FIG. 6 , the body 402 of the shutter disc 208 includes anapproximately flat and planar section 602 at an outer region of the body402. The planar section 602 may correspond to and/or may be included inan outer edge region 604. The body 402 of the shutter disc 208 alsoincludes a cross-sectional wave shape section 606 between a center(e.g., the center 502) of the body 402 and the approximately flat andplanar section 602. The cross-sectional wave shape section 606 (e.g., aplurality of concentric waves formed using the cross-sectional waveshape section 606) may extend between a center of the shutter disc 208(e.g., the center 502) and an edge of the shutter disc 208 (e.g., theouter edge 504).

In some implementations, a thickness 608 of the body 402 is included ina range of approximately 4.5 mm to approximately 5.5 mm. By selectingthe thickness 608 within this range, stress distribution with the body402 during the conditioning process may be such that the shutter disc208, including the body 402, does not deform or warp. However, othervalues for the thickness 608 of the body 402 are within the scope of thepresent disclosure.

The body 402 may be recessed to a depth 610. As an example, and forforming (e.g., stamping or milling, among other examples) one or more ofthe cross-sectional wave shape section(s) 606, the depth may be includedin a range of approximately 2.5 mm to approximately 3.5 mm. By selectingthe depth 610 within this range, the cross-sectional wave shapesection(s) 606 may be formed to targeted contours, curvatures, and/orshapes.

As shown in FIG. 6 , and in some implementations, the cross-sectionalwave shape section 606 may include a thickness 612. The thickness 608 ofthe body 402 in the planar section 602 may be greater relative to thethickness 612 of the body 402 in the cross-sectional wave shape section606. The thickness 612 may be included in range of approximately 1.7 mmto approximately 2.0 mm between a top surface of the body 402 and abackside surface of the body 402. By selecting the thickness 612 of thecross-sectional wave shape section 606 within this range, a balancebetween a rigidity that prevents the shutter disc 208, including thebody 402, from warping during the conditioning process and a rigiditythat allows forming of the cross-sectional wave shape section 606 may beattained. However, other values for the thickness 612 of the body 402 ofthe cross-sectional wave shape section 606 are within the scope of thepresent disclosure.

Other portions of the shutter disc 208 not including the cross-sectionalwave shape section 606 may have one or more thicknesses in a range ofapproximately 1.5 to 2.0 mm to reduce a weight of the shutter disc 208.

FIG. 6 further shows a trough 614 and a crest 616 of the cross-sectionalwave shape section 606. In some implementations, a relative positionalrelationship of the trough 614 to the crest 616 is such that a topsurface of the trough 614 is approximately equal to or below a backsidesurface of the crest 616. Such a relative positional relationship may beapplicable to one or more of a plurality of concentric wave shapes.

The cross-sectional wave shape section 606 may have a peak-to-peak width618 (e.g., a peak-to-peak width between two of the crests 616). As anexample, the peak-to-peak width 618 may be in a range from approximately30.0 mm to approximately 31.0 mm. However, other values for thepeak-to-peak width 618 are within the scope of the present disclosure.

The planar section 602 may have a width 620. As an example, the width620 may be in a range from approximately 28.7 mm to approximately 29.7mm. Selecting the width 620 of the planar section 602 within this rangemay enable a robotic arm (e.g., the robotic arm 128) to place theshutter disc 208 on a substrate support component (e.g., the substratesupport component 204). However, other values for the width 620 arewithin the scope of the present disclosure.

In some implementations, the body 402 includes a combination of one ormore pluralities of a plurality of concentric wave shapes. For example,a top surface of the body 402 (e.g., the top surface 408) may include afirst plurality of the concentric wave shapes, while a bottom (e.g., thebackside surface 406) may include a second (different) plurality ofconcentric wave shapes.

As indicated above, FIG. 6 is provided as an example. Other examples maydiffer from what is described with regard to FIG. 6 .

FIG. 7 is a diagram of example components of one or more devices ofFIGS. 1 and 2 described herein. In some implementations, thesemiconductor substrate transfer system 126, the plurality of roboticarms 128, the processing chamber 202, and/or the substrate supportcomponent 204 include one or more devices 700 and/or one or morecomponents of device 700. As shown in FIG. 7 , device 700 may include abus 710, a processor 720, a memory 730, an input component 740, anoutput component 750, and a communication component 760.

Bus 710 includes one or more components that enable wired and/orwireless communication among the components of device 700. Bus 710 maycouple together two or more components of FIG. 7 , such as via operativecoupling, communicative coupling, electronic coupling, and/or electriccoupling. Processor 720 includes a central processing unit, a graphicsprocessing unit, a microprocessor, a controller, a microcontroller, adigital signal processor, a field-programmable gate array, anapplication-specific integrated circuit, and/or another type ofprocessing component. Processor 720 is implemented in hardware,firmware, or a combination of hardware and software. In someimplementations, processor 720 includes one or more processors capableof being programmed to perform one or more operations or processesdescribed elsewhere herein.

Memory 730 includes volatile and/or nonvolatile memory. For example,memory 730 may include random access memory (RAM), read only memory(ROM), a hard disk drive, and/or another type of memory (e.g., a flashmemory, a magnetic memory, and/or an optical memory). Memory 730 mayinclude internal memory (e.g., RAM, ROM, or a hard disk drive) and/orremovable memory (e.g., removable via a universal serial busconnection). Memory 730 may be a non-transitory computer-readablemedium. Memory 730 stores information, instructions, and/or software(e.g., one or more software applications) related to the operation ofdevice 700. In some implementations, memory 730 includes one or morememories that are coupled to one or more processors (e.g., processor720), such as via bus 710.

Input component 740 enables device 700 to receive input, such as userinput and/or sensed input. For example, input component 740 may includea touch screen, a keyboard, a keypad, a mouse, a button, a microphone, aswitch, a sensor, a global positioning system sensor, an accelerometer,a gyroscope, and/or an actuator. Output component 750 enables device 700to provide output, such as via a display, a speaker, and/or alight-emitting diode. Communication component 760 enables device 700 tocommunicate with other devices via a wired connection and/or a wirelessconnection. For example, communication component 760 may include areceiver, a transmitter, a transceiver, a modem, a network interfacecard, and/or an antenna.

Device 700 may perform one or more operations or processes describedherein. For example, a non-transitory computer-readable medium (e.g.,memory 730) may store a set of instructions (e.g., one or moreinstructions or code) for execution by processor 720. Processor 720 mayexecute the set of instructions to perform one or more operations orprocesses described herein. In some implementations, execution of theset of instructions, by one or more processors 720, causes the one ormore processors 720 and/or the device 700 to perform one or moreoperations or processes described herein. In some implementations,hardwired circuitry is used instead of or in combination with theinstructions to perform one or more operations or processes describedherein. Additionally, or alternatively, processor 720 may be configuredto perform one or more operations or processes described herein. Thus,implementations described herein are not limited to any specificcombination of hardware circuitry and software.

The number and arrangement of components shown in FIG. 7 are provided asan example. Device 700 may include additional components, fewercomponents, different components, or differently arranged componentsthan those shown in FIG. 7 . Additionally, or alternatively, a set ofcomponents (e.g., one or more components) of device 700 may perform oneor more functions described as being performed by another set ofcomponents of device 700.

As indicated above, FIG. 7 is provided as an example. Other examples maydiffer from what is described with regard to FIG. 7 .

FIG. 8 is a flowchart of an example process 800 associated withperforming a conditioning operation in a processing chamber using ashutter disc described herein. In some implementations, one or moreprocess blocks of FIG. 8 are performed by a semiconductor processingtool (e.g., the semiconductor processing system 100). In someimplementations, one or more process blocks of FIG. 8 are performed byanother device or a group of devices separate from or including thesemiconductor processing system 100, such as the semiconductor substratetransfer system 126, the plurality of robotic arms 128, the processingchamber 202, and/or the substrate support component 204. Additionally,or alternatively, one or more process blocks of FIG. 8 may be performedby one or more components of device 700, such as processor 720, memory730, input component 740, output component 750, and/or communicationcomponent 760.

As shown in FIG. 8 , process 800 may include positioning a shutter discon a substrate support component in a processing chamber of a PVD tool(block 810). For example, the semiconductor substrate transfer system126 may position a shutter disc 208 on a substrate support component 204in a processing chamber 202 of a PVD tool, as described above. In someimplementations, a width 414 of a portion of a thin-film material 410 onan outer region of a backside surface 406 of the shutter disc 208 isless than a width 422 of a space 420 between an inner edge 412 of thethin-film material 410 and an outer edge of the substrate supportcomponent 204.

As further shown in FIG. 8 , process 800 may include performing aconditioning operation in the processing chamber of the PVD tool whilethe shutter disc is positioned on the substrate support component (block820). For example, the semiconductor processing system 100 may performthe conditioning operation in the processing chamber 202 of the PVD toolwhile the shutter disc 208 is positioned on the substrate supportcomponent 204, as described above.

Process 800 may include additional implementations, such as any singleimplementation or any combination of implementations described belowand/or in connection with one or more other processes describedelsewhere herein.

In a first implementation, positioning the shutter disc 208 includespositioning the shutter disc on the substrate support component 204 suchthat a spacing 420 between the inner edge 412 of the thin-film material410 and an outer edge 418 of the substrate support component 204 is in arange of approximately 3 millimeters (mm) to approximately 5 mm.

In a second implementation, alone or in combination with the firstimplementation, process 800 includes positioning at least one of aplaten ring 226, a lower shield 224, or an upper shield 230 over theshutter disc 208 to reduce contamination of the substrate supportcomponent.

In a third implementation, alone or in combination with one or more ofthe first and second implementations, the substrate support component204 includes a hot plate or an electrostatic chuck.

In a fourth implementation, alone or in combination with one or more ofthe first through third implementations, the shutter disc 208 includes atop surface 408, and where the top surface 408 includes across-sectional wave shape section 606 that extends between a center ofthe shutter disc 208 and an outer edge of the shutter disc 208.

In a fifth implementation, alone or in combination with one or more ofthe first through fourth implementations, the shutter disc 208 includesa body 402 including an approximate disc shape, where the body includesan approximately flat and planar section 602 at an outer edge region 604of the body 402, and a cross-sectional wave shape section 606 between acenter of the body 402 and the approximately flat and planar section602.

In a sixth implementation, alone or in combination with one or more ofthe first through fifth implementations, a thickness 608 of theapproximately flat and planar section 602 is greater than a thickness ofthe cross-sectional wave shape section 606.

Although FIG. 8 shows example blocks of process 800, in someimplementations, process 800 includes additional blocks, fewer blocks,different blocks, or differently arranged blocks than those depicted inFIG. 8 . Additionally, or alternatively, two or more of the blocks ofprocess 800 may be performed in parallel.

Using techniques described above may increase effectiveness of theshutter disc preventing particulates from being deposited or transferredonto one or more surfaces of the substrate support component during theconditioning process. Furthermore, the techniques may reduce alikelihood of the shutter disc cracking during the conditioning process.In this way, effectiveness of the conditioning process is improved. Theimprovement in the conditioning process may reduce chucking errorsexperienced by the PVD tool and reduce a frequency of maintenanceoperations for the PVD tool, effective to increase operating efficiencyand throughput of the PVD tool. Furthermore, and in addition torealizing a savings in maintenance costs due to a decreased rate ofshutter disc replacement, a yield of integrated circuit devicesfabricated using the PVD tool may increase.

As described in greater detail above, some implementations describedherein provide a method. The method includes positioning a shutter discon a substrate support component in a processing chamber of a PVD tool,where a width of a portion of a thin-film material on an outer region ofa backside surface of the shutter disc is less than a width of a spacebetween an inner edge of the thin-film material and an outer edge of thesubstrate support component. The method includes performing aconditioning operation in the processing chamber of the PVD tool whilethe shutter disc is positioned on the substrate support component.

As described in greater detail above, some implementations describedherein provide a shutter disc for use in a PVD processing chamber. Theshutter disc includes a body including an approximately circular shape.The shutter disc includes a top surface of the body, where the topsurface includes a plurality of concentric wave shapes.

As described in greater detail above, some implementations describedherein provide a deposition tool. The deposition tool includes aprocessing chamber. The deposition tool includes a substrate supportcomponent included in the processing chamber. The deposition toolincludes a shutter disc included on the substrate support component,where the shutter disc includes a plurality of concentric wave shapesthat includes one or more wave-shaped sections.

As used herein, “satisfying a threshold” may, depending on the context,refer to a value being greater than the threshold, greater than or equalto the threshold, less than the threshold, less than or equal to thethreshold, equal to the threshold, not equal to the threshold, or thelike.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A shutter disc for use in a physical vapordeposition (PVD) processing chamber, comprising: a body, comprising: aportion having a cross-sectional wave-shape and comprising: a pluralityof concentric crest portions, and a plurality of concentric troughportions.
 2. The shutter disc of claim 1, wherein a top surface of atleast one concentric trough portion, of the plurality of concentrictrough portions, is below a backside surface of at least one concentriccrest portion of the plurality of concentric crest portions. The shutterdisc of claim 1, wherein a top surface of at least one concentric troughportion, of the plurality of concentric trough portions, is at an equalheight with a backside surface of at least one concentric crest portionof the plurality of concentric crest portions.
 4. The shutter disc ofclaim 1, wherein a peak-to-peak width of the plurality of concentriccrest portions is in a range from approximately 30.0 mm to approximately31.0 mm.
 5. The shutter disc of claim 1, wherein the body furthercomprises a planar section at an outer region of the body.
 6. Theshutter disc of claim 5, wherein a thickness of the body in the planarsection is greater than a thickness of the body in the portion havingthe cross-sectional wave-shape.
 7. The shutter disc of claim 1, whereina thickness of the body is in a range of approximately 4.5 mm toapproximately 5.5 mm.
 8. A deposition tool comprising: a processingchamber; a substrate support component included in the processingchamber; and a shutter disc included on the substrate support component,wherein the shutter disc comprises: one or more wave-shaped sections,and a thin-film material on an outer region of a backside surface of theshutter disc, wherein a width of a spacing (between an inner edge of thethin-film material and an outer edge of the substrate support componentis included in a range of approximately 3 millimeters (mm) toapproximately 5 mm.
 9. The deposition tool of claim 8, wherein theshutter disc further comprises a planar section.
 10. The deposition toolof claim 8, wherein the shutter disc further comprises the thin-filmmaterial on a top surface of the shutter disc.
 11. The deposition toolof claim 10, wherein the shutter disc further comprises: a body, whereinthe thin-film material wraps around an edge of the body and onto thebackside surface.
 12. The deposition tool of claim 8, wherein the one ormore wave-shaped sections comprises a plurality of concentric waveshapes.
 13. The deposition tool of claim 12, wherein a peak-to-peakwidth of the plurality of concentric wave shapes is in a range fromapproximately 30.0 mm to approximately 31.0 mm.
 14. The deposition toolof claim 8, wherein the one or more wave-shaped sections comprises: aplurality of concentric crest portions, and a plurality of concentrictrough portions.
 15. A shutter disc for use in a physical vapordeposition (PVD) processing chamber, comprising: a body, comprising: awave-shaped region comprising a cross-sectional wave shape, and a planarregion.
 16. The shutter disc of claim 15, wherein a top surface of atrough portion in the wave-shaped region is below a backside surface ofa crest in the wave-shaped region.
 17. The shutter disc of claim 15,wherein a top surface of a trough portion in the wave-shaped region isequal in height with a backside surface of a crest in the wave-shapedregion.
 18. The shutter disc of claim 15, wherein a peak-to-peak widthin the wave-shaped region is in a range from approximately 30.0 mm toapproximately 31.0 mm.
 19. The shutter disc of claim 15, wherein athickness of the body in the planar region is greater than a thicknessof the body in the wave-shaped region.
 20. The shutter disc of claim 15,wherein the wave-shaped region comprises a plurality of concentric waveshapes.